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Influence of defect states on the nonlinear optical properties of GaN

✍ Scribed by Haag, H.; Hönerlage, B.; Briot, O.; Aulombard, R. L.

Book ID
121328425
Publisher
The American Physical Society
Year
1999
Tongue
English
Weight
98 KB
Volume
60
Category
Article
ISSN
1098-0121

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Influence of Dopants on Defect Formation
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The influence of p-dopants (Mg and Be) on the structure of GaN has been studied using Transmission Electron Microscopy (TEM). Bulk GaN : Mg and GaN : Be crystals grown by a high pressure and high temperature process and GaN : Mg grown by metal-organic chemical-vapor deposition (MOCVD) have been stud