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Influence of defect passivation by hydrogen on the Schottky barrier height of GaAs and InP contacts

✍ Scribed by Van Meirhaeghe, R. L.; Laflere, W. H.; Cardon, F.

Book ID: 120882123
Publisher: American Institute of Physics
Year: 1994
Tongue: English
Weight: 723 KB
Volume: 76
Category: Article
ISSN: 0021-8979
DOI: 10.1063/1.357089

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