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Influence of channel-deposition conditions and gate insulators on performance and stability of top-gate IGZO transparent thin-film transistors

✍ Scribed by Hsing-Hung Hsieh; Cheng-Han Wu; Chih-Wei Chien; Chang-Ken Chen; Chao-Shun Yang; Chung-Chih Wu


Book ID
117970358
Publisher
Society for Information Display
Year
2010
Tongue
English
Weight
880 KB
Volume
18
Category
Article
ISSN
1071-0922

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## Abstract The performance of top‐gate thin film transistors with solution processed zinc oxide (ZnO) channel layer and poly(4‐vinylphenol) (PVP) gate dielectric have been investigated. The transparency of the PVP film was more than 80% in the visible region, indicating that PVP can be used as a p