Influence of Ce doping on the distribution of the electron density in Nd2−xCexCuO4−δ

✍ Scribed by I.P. Makarova; A. Bram; J. Markl; K.V. Gamaunov; A.L. Ivanov; R.A. Tamazyan; M. Röhner; H. Burzlaff; G. Saemann-Ischenko; V.I. Simonov; V.V. Osiko

• Publisher: Elsevier Science
• Year: 1994
• Tongue: English
• Weight: 721 KB
• Volume: 223
• Category: Article
• ISSN: 0921-4534
• DOI: 10.1016/0921-4534(94)00040-9

✦ Synopsis

Nd2_xCexCuO4_6 single crystals have been studied using X-ray diffraction data. The investigations have been carried out on a non-doped crystal of Nd2CuO4 and Ce doped crystals of Nd2_xCexCuO4_6. From the structure parameters obtained, the deformation electron density distribution has been determined. In the Nd2CuO 4 specimen this distribution shows the peaks of localized 3dz2 electrons of the Cu atom, coordinated by four O atoms in a square, which complete the Cu polyhedron to an octahedron. The distinction between the bonding of the O (1) atom in the CuO2 plane and the O (2) atom is also observed. In the Nd2_xCexCuO4_6 specimens the Ce doping causes a change of the valence state of the Cu atom and formation of channels with positive deformation electron density in the crystals.