𝔖 Bobbio Scriptorium
✦   LIBER   ✦

Influence of beam parameters and low-energy electron neutralization on wafer charging during ion implantation

✍ Scribed by A. Cacciato; A. Heessels; R. Sanders


Book ID
114170676
Publisher
Elsevier Science
Year
1999
Tongue
English
Weight
194 KB
Volume
148
Category
Article
ISSN
0168-583X

No coin nor oath required. For personal study only.


πŸ“œ SIMILAR VOLUMES


A nuclear reaction analysis and optical
✍ A. Markwitz; F. Lucas; J. Rusterucci; J. Kennedy; W.J. Trompetter; M. Rudolphi; πŸ“‚ Article πŸ“… 2006 πŸ› Elsevier Science 🌐 English βš– 263 KB

Ion implantation of 20 keV 12 C + ions into (1 0 0), p-type silicon with ion fluence of 8 β€’ 10 16 at. cm Γ€2 followed by an electron beam annealing under high vacuum conditions has been performed to investigate the formation of crystalline nano-scale SiC features on the silicon surface. Depending on