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Influence of base dopant out-diffusion into the emitter in SiSiGe heterojunction bipolar transistor using Monte Carlo simulations

✍ Scribed by Sylvie Galdin; Philippe Dollfus; Mireille Mouis; Françoise Meyer; Patrice Hesto


Publisher
Elsevier Science
Year
1995
Tongue
English
Weight
316 KB
Volume
157
Category
Article
ISSN
0022-0248

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