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Influence of atomic relaxations on the structural properties of SiC polytypes from ab initio calculations

✍ Scribed by Käckell, P.; Wenzien, B.; Bechstedt, F.

Book ID
115502182
Publisher
The American Physical Society
Year
1994
Tongue
English
Weight
918 KB
Volume
50
Category
Article
ISSN
1098-0121

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The atomic structure and structural stabilities of silicon oxycarbide SiO x C y phase formed at the SiC/SiO 2 interface were studied using ab initio pseudopotential method. The total energies and the cohesive energies of the SiO x C y at different composition: SiC, SiO 1/4 C 3/4 , SiO 1/2 C 1/2 , Si