The transverse magnetoresistance (TMR) was measured as a function of intravalley scattering pE, where p is the carrier mobility at different orientations of planes in n-type silicon crystals with a donor concentration of 1.6 x 1Olh cm '. These measurements were done in low electric and magnetic fields, for current vectors deviating from the (1 00). (1 IO) and
(1 1 1) axes of the different planes by 17.5". 37.5" and 95". respectively. i.e. ~(10 0) = 17.5". cp(1 10) = 37.5" and q( 1 1 1) = 95". The results show different anomalous effects at T = 80, 100 and 150 K. Sharp variations in negative TMR with different saturation values were observed in the (10 0) plane at all temperatures.
In the (1 1 0) plane at T = 80 and 100 K, the negative MR tends to be positive at higher values of wB. but at 150 K many irregular distributions of negative TMR were observed at low PB up to 0.3 and as I.LB increased a positive TMR was found. Finally in the (1 1 1) plane all TMR curves are positive and characterized by what is called different humps for all temperatures. This shows that the TMR is not only dependent on usual parameters, but also on the value of the angle of deviation of the current from any axis of symmetry with respect to the type of orientation of a plane dependent phenomenon. These results may be attributed to the asymmetry of the electric potential gradient and, thus, are a result of the deviation, by different angles, of the current vectors from the crystallographic axes