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Influence of Architecture-Controlled GaN Rod Arrays on the Output Power of GaN LEDs

✍ Scribed by Cha-Hsin Chao; Shih-Che Hung; Shu-Chia Shiu; Ming-Tung Kuo; Chang-Ho Chen; Ching-Hua Changjean; Ching-Fuh Lin

Book ID: 119805885
Publisher: IEEE
Year: 2010
Tongue: English
Weight: 720 KB
Volume: 22
Category: Article
ISSN: 1041-1135
DOI: 10.1109/lpt.2010.2089444

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## Abstract In order to enhance light output power of green light‐emitting diodes (LEDs) on a sapphire (0001) substrate, we employ 1.5 nm‐thick AlGaN interlayer between an InGaN well layer and an upper GaN barrier layer. AlGaN interlayer controls asymmetric band profile due to piezoelectric field,