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Influence of annealing on the metal/semiconductor contacts deposited on sulfur-treatedn-GaAs surface

✍ Scribed by E. V. Erofeev; V. A. Kagadei


Book ID
111445020
Publisher
Springer
Year
2011
Tongue
English
Weight
405 KB
Volume
45
Category
Article
ISSN
1063-7826

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## Abstract Influence of a β€œSchottky‐like” barrier on a Silicon rod waveguide to its propagation characteristics were studied in W‐band. A considerable positive phase shift was observed, with a maximum at about 99 GHz (about 10 radians at 30‐mm long waveguide). Maximal insertion loss was also obser