In this work we have focused our attention on the role of the gas mixture (O 2 /Ar) used during HfO 2 thin film processing by r.f. magnetron sputtering, to produce dielectrics with suitable characteristics to be used as gate dielectric. Increasing the O 2 /Ar ratio from 0 to 0.2, the films propertie
โฆ LIBER โฆ
Influence of annealing condition on the properties of sputtered hafnium oxide
โ Scribed by Seok-Woo Nam; Jung-Ho Yoo; Suheun Nam; Hyo-Jick Choi; Dongwon Lee; Dae-Hong Ko; Joo Ho Moon; Ja-Hum Ku; Siyoung Choi
- Book ID
- 117145739
- Publisher
- Elsevier Science
- Year
- 2002
- Tongue
- English
- Weight
- 695 KB
- Volume
- 303
- Category
- Article
- ISSN
- 0022-3093
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