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Influence of Al2O3 dielectrics on the trap-depth profiles in MOS devices investigated by the charge-pumping method

✍ Scribed by Jakschik, S.; Avellan, A.; Schroeder, U.; Bartha, J.W.

Book ID: 114617663
Publisher: IEEE
Year: 2004
Tongue: English
Weight: 200 KB
Volume: 51
Category: Article
ISSN: 0018-9383
DOI: 10.1109/ted.2004.839878

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