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Indium segregation in MOCVD InGaN layers studied by medium energy ion scattering

โœ Scribed by Chalker, P.R.; Morrice, D.; Joyce, T.B.; Noakes, T.C.Q.; Bailey, P.; Considine, L.


Book ID
122722754
Publisher
Elsevier Science
Year
2000
Tongue
English
Weight
278 KB
Volume
9
Category
Article
ISSN
0925-9635

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Medium energy ion scattering (MEIS) has been used to study the kinetics of solid phase epitaxial regrowth (SPEG) of ultrathin amorphous layers created by room temperature implantation of 5 keV energy phosphorus ions into Si(1 0 0). P ion fluences ranged from 5e14 cm ร€2 up to 1e16 cm ร€2 , the associa