Indium segregation in InGaN quantum-well structures
β Scribed by Duxbury, N.; Bangert, U.; Dawson, P.; Thrush, E. J.; Van der Stricht, W.; Jacobs, K.; Moerman, I.
- Book ID
- 119938070
- Publisher
- American Institute of Physics
- Year
- 2000
- Tongue
- English
- Weight
- 804 KB
- Volume
- 76
- Category
- Article
- ISSN
- 0003-6951
- DOI
- 10.1063/1.126108
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π SIMILAR VOLUMES
We report the results of calculations for the energies of confined electrons and holes and their wavefunction overlap in In x Ga 1--x N/GaN quantum wells (QWs) with an indium concentration of x = 15% in the well material. It is known that the observed increase in the photoluminescence lifetime with
The potential associated with quantum well (QW) structures is usually assumed to be a step function; this implies a compositional abruptness at each interface. But abrupt interfaces do not occur in practice, especially if one of the atoms segregates during growth. This leads to asymmetries in the QW