𝔖 Bobbio Scriptorium
✦   LIBER   ✦

Indium oxide thin film transistors via reactive sputtering using metal targets

✍ Scribed by Qijun, Yao ;Dejie, Li

Book ID
105364531
Publisher
John Wiley and Sons
Year
2008
Tongue
English
Weight
214 KB
Volume
205
Category
Article
ISSN
0031-8965

No coin nor oath required. For personal study only.

✦ Synopsis

Abstract

Thin film transistors with In~2~O~3~ channel were fabricated. The channel layer of In~2~O~3~ and gate dielectric of Ta~2~O~5~ in the device was deposited by reactive sputtering using metal targets. A thin layer of Bi was deposited on the channel and then an‐ nealed to help stabilize the device performance. The device with optimal dose of Bi exhibited a channel mobility of 12 cm^2^/V s. Effects of Bi layer and influence of gate dielectric to the device performance are investigated. (Β© 2008 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)

πŸ“œ SIMILAR VOLUMES

Indium oxide thin-film transistor by rea
Indium oxide thin-film transistor by reactive ion beam assisted deposition
✍ Vygranenko, Y. ;Wang, K. ;Vieira, M. ;Nathan, A. πŸ“‚ Article πŸ“… 2008 πŸ› John Wiley and Sons 🌐 English βš– 326 KB

## Abstract This work reports on the fabrication and characterization of indium oxide semiconducting films and their application in thin‐film transistors (TFTs). The films have been deposited at room temperature by oxygen ion beam assisted e‐beam evaporation. The influence of deposition conditions