✦ LIBER ✦
Indium Gallium Arsenide Quantum Dot Gate Field-Effect Transistor Using II–VI Tunnel Insulators Showing Three-State Behavior
✍ Scribed by P.-Y. Chan, E. Suarez, M. Gogna, B.I. Miller, E.K. Heller, J.E. Ayers, F.C. Jain
- Book ID
- 118816411
- Publisher
- Springer US
- Year
- 2012
- Tongue
- English
- Weight
- 572 KB
- Volume
- 41
- Category
- Article
- ISSN
- 0361-5235
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