Indium doping effect on GaN in the initial growth stage
β Scribed by Hairong Yuan; Da-Cheng Lu; Xianglin Liu; Zhen Chen; Xiaohui Wang; Du Wang; Peide Han
- Book ID
- 110609364
- Publisher
- Springer US
- Year
- 2001
- Tongue
- English
- Weight
- 210 KB
- Volume
- 30
- Category
- Article
- ISSN
- 0361-5235
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## Abstract Crackβfree GaN films have been achieved by inserting an Inβdoped lowβtemperature (LT) AlGaN interlayer grown on silicon by metalorganic chemical vapor deposition. The relationship between lattice constants __c__ and __a__ obtained by Xβray diffraction analysis shows that indium doping i
Study on initial growth of GaN revealed evolutional improvement of grain structure in the initial stage of ammonothermal growth. GaN crystals grown on N-polar surface of GaN platelets for various growth durations were characterized with the X-ray diffraction and Nomarski microscopy. The full width h