𝔖 Bobbio Scriptorium
✦   LIBER   ✦

Indium doping effect on GaN in the initial growth stage

✍ Scribed by Hairong Yuan; Da-Cheng Lu; Xianglin Liu; Zhen Chen; Xiaohui Wang; Du Wang; Peide Han


Book ID
110609364
Publisher
Springer US
Year
2001
Tongue
English
Weight
210 KB
Volume
30
Category
Article
ISSN
0361-5235

No coin nor oath required. For personal study only.


πŸ“œ SIMILAR VOLUMES


Initial stages of the GaN growth on oxid
✍ V. N. Bessolov; Yu. V. Zhilyaev; E. V. Konenkova; S. A. Kukushkin; A. V. Luk’yan πŸ“‚ Article πŸ“… 2001 πŸ› SP MAIK Nauka/Interperiodica 🌐 English βš– 130 KB
Effect of indium-doped interlayer on the
✍ Wu, Jiejun ;Zhao, Lubing ;Zhang, Guoyi ;Liu, Xianglin ;Zhu, Qinsheng ;Wang, Zhan πŸ“‚ Article πŸ“… 2008 πŸ› John Wiley and Sons 🌐 English βš– 350 KB

## Abstract Crack‐free GaN films have been achieved by inserting an In‐doped low‐temperature (LT) AlGaN interlayer grown on silicon by metalorganic chemical vapor deposition. The relationship between lattice constants __c__ and __a__ obtained by X‐ray diffraction analysis shows that indium doping i

Improvement of structural quality in the
✍ Yoshihiro Nojima; Masanori Ikari; Edward Letts; Tadao Hashimoto πŸ“‚ Article πŸ“… 2011 πŸ› Elsevier Science 🌐 English βš– 327 KB

Study on initial growth of GaN revealed evolutional improvement of grain structure in the initial stage of ammonothermal growth. GaN crystals grown on N-polar surface of GaN platelets for various growth durations were characterized with the X-ray diffraction and Nomarski microscopy. The full width h