Indices of refraction of InGaAs/Alas/AlAsSb multiple-quantum-wells measured by an optical waveguide technique

✍ Scribed by T. Mozume

• Book ID: 104085107
• Publisher: Elsevier Science
• Year: 2008
• Tongue: English
• Weight: 255 KB
• Volume: 40
• Category: Article
• ISSN: 1386-9477
• DOI: 10.1016/j.physe.2007.09.125

✦ Synopsis

In x Ga 1Àx As=AlAs=AlAs y Sb 1Ày coupled-double-quantum-wells (CDQWs) were grown on InP substrates by molecular beam epitaxy (MBE). The structural quality was examined by X-ray diffraction (XRD) measurements using a high-resolution four-crystal diffractometer. The indices of refraction n and thickness for a series of CDQWs were measured using a prism coupler method at two discrete wavelengths. The thickness of CDQWs corresponds well with that obtained from XRD measurements. We found that the effective values of n of these CDQWs were slightly smaller than those obtained by linearly averaging n of the constituent layers of the CDQWs. This indicates that the quantum confinement of the carriers give rise to the shift of the effective index of refraction of CDQWs.