Increased Single-Event Transient Pulsewidths in a 90-nm Bulk CMOS Technology Operating at Elevated Temperatures

✍ Scribed by Gadlage, M.J.; Ahlbin, J.R.; Narasimham, B.; Ramachandran, V.; Dinkins, C.A.; Pate, N.D.; Bhuva, B.L.; Schrimpf, R.D.; Massengill, L.W.; Shuler, R.L.; McMorrow, D.

• Book ID: 118277143
• Publisher: IEEE
• Year: 2010
• Tongue: English
• Weight: 834 KB
• Volume: 10
• Category: Article
• ISSN: 1530-4388
• DOI: 10.1109/tdmr.2009.2036719