Increased current gain and suppression of peripheral base currents in silicide self-aligned narrow-width polysilicon-emitter transistors of an advanced BiCMOS technology

✍ Scribed by El-Diwany, M.H.; Brassington, M.P.; Tuntasood, P.

• Book ID: 111934028
• Publisher: IEEE
• Year: 1988
• Tongue: English
• Weight: 283 KB
• Volume: 9
• Category: Article
• ISSN: 0741-3106
• DOI: 10.1109/55.705