InAsSb/InAsSbP diode lasers with separate electrical and optical confinement, emitting at 3–4 µm

✍ Scribed by T. N. Danilova; A. P. Danilova; O. G. Ershov; A. H. Imenkov; N. M. Kolchanova; M. V. Stepanov; V. V. Sherstnev; Yu. P. Yakovlev

• Book ID: 110119674
• Publisher: Springer
• Year: 1997
• Tongue: English
• Weight: 72 KB
• Volume: 31
• Category: Article
• ISSN: 1063-7826
• DOI: 10.1134/1.1187264