InAsP/GaInP strained multilayers grown by MOVPE on (001), (113)B and (110) InP substrates: the role of the surface characteristics
✍ Scribed by A. Ponchet; A. Rocher; A. Ougazzaden; A. Mircea
- Book ID
- 104157778
- Publisher
- Elsevier Science
- Year
- 1997
- Tongue
- English
- Weight
- 374 KB
- Volume
- 28
- Category
- Article
- ISSN
- 0026-2692
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✦ Synopsis
Zero-net strained multilayers alternating GalnP and lnAsP with lattice mismatches with lnP of-1% and 1% respectively have been grown by Metallo-Organic Vapour Phase Epitaxy and examined by Transmission Electron Microscopy. Different substratc orientations werc used, inducing different growth morphologies. On (001) and (II3)B substrates, the GalnP and InAsP layers were laterally modulated, forming vertical stripes parallel to the [110] and [332] directions respectively. This could be related to the surface reconstruction (group V element ditnerisation), which favours islands built with facets of A type (gallium steps) rather than with £tcets of B type (arsenic steps). On a (110) vicinal substrate (misorientation of 3 ° towards (lll)B), a step bunching phenomenon was observed. ~()