InAs quantum boxes in GaAs/AlAs pillar microcavities: from spectroscopic investigations to spontaneous emission control

✍ Scribed by J.M. Gérard; B. Legrand; B. Gayral; E. Costard; B. Sermage; R. Kuszelewicz; D. Barrier; V. Thierry-Mieg; T. Rivera; J.Y. Marzin

• Book ID: 104429205
• Publisher: Elsevier Science
• Year: 1998
• Tongue: English
• Weight: 140 KB
• Volume: 2
• Category: Article
• ISSN: 1386-9477
• DOI: 10.1016/s1386-9477(98)00164-7

✦ Synopsis

GaAs=AlAs pillar microcavities containing an array of InAs quantum boxes in their core region have been fabricated by molecular beam epitaxy, electron-beam lithography and reactive ion etching. By placing this broadband light emitter in the cavity, we can probe precisely by photoluminescence the modal structure of the micropillars. After having validated this approach through the study of circular pillars, we address two important issues in context of spontaneous emission control. We show ÿrst that it is possible, by choosing an elliptical cross-section, to lift the polarization degeneracy of the fundamental mode of circular micropillars. By measuring Purcell's factor for small pillars containing quantum boxes, we then highlight their potential for observing large cavity quantum electrodynamic e ects in the weak coupling regime, which is conÿrmed by recent preliminary time-resolved experiments.