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In situX-ray diffraction during MOCVD of III-nitrides

✍ Scribed by Simbrunner, C. ;Navarro-Quezada, A. ;Schmidegg, K. ;Bonanni, A. ;Kharchenko, A. ;Bethke, J. ;Lischka, K. ;Sitter, H.

Book ID
105364373
Publisher
John Wiley and Sons
Year
2007
Tongue
English
Weight
337 KB
Volume
204
Category
Article
ISSN
0031-8965

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✦ Synopsis

Abstract

Nowadays Metal Organic Chemical Vapor Deposition (MOCVD) is the most frequently used fabrication process for growing III–V‐nitrides. The missing ultra high vacuum (UHV) conditions narrow the window of possible in situ characterization techniques to only optical methods like spectroscopic ellipsometry (SE) and X‐ray diffraction. We are able to observe the growing surface simultaneously with a multi wavelength ellipsometer and a X‐ray diffraction (XRD) system mounted on an AIXTRON 200 RF‐S reactor. Properties like crystal quality, composition, superlattice periodicity and strain relaxation of hexagonal GaN/AlGaN heterostructures are determined in situ using XRD. (Β© 2007 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)

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## Abstract Metal Organic Chemical Vapor Deposition (MOCVD) is nowadays the most frequently used industrial method for growing III‐nitrides. The possible spectrum of in‐situ diagnostic tools is quite narrow because the MOCVD growth process excludes all techniques based on ultra high vacuum conditio