In situ variations of recombination characteristics in MOCVD grown GaN epi-layers during 1.7MeV protons irradiation

✍ Scribed by Gaubas, E.; Kovalevskij, V.; Kadys, A.; Gaspariunas, M.; Mickevicius, J.; Jasiunas, A.; Remeikis, V.; Uleckas, A.; Tekorius, A.; Vaitkus, J.; Velicka, A.

• Book ID: 121816440
• Publisher: Elsevier Science
• Year: 2013
• Tongue: English
• Weight: 631 KB
• Volume: 307
• Category: Article
• ISSN: 0168-583X
• DOI: 10.1016/j.nimb.2012.11.059