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In situ thermal nitridation of GaAs using metalorganic vapor phase epitaxy

✍ Scribed by Jingxi Sun; Ling Zhang; T.F Kuech

Book ID
108342827
Publisher
Elsevier Science
Year
1998
Tongue
English
Weight
138 KB
Volume
195
Category
Article
ISSN
0022-0248

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## Abstract Metalorganic vapor phase epitaxy of InN layers on sapphire was studied in‐situ by spectroscopic ellipsometry (SE), ex‐situ atomic force microscopy and optical microscopy. Surface morphology has been largely improved by using nitrogen instead of hydrogen as carrier gas during sapphire ni