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In situ TEM observation of nanobonding formation between silicon MEMS tips

✍ Scribed by Ishida, Tadashi; Kakushima, Kuniyuki; Sasaki, Naruo; Fujita, Hiroyuki

Book ID
119955540
Publisher
Institute of Physics
Year
2010
Tongue
English
Weight
802 KB
Volume
21
Category
Article
ISSN
0957-4484

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The generation mechanism of pinhole defects in the Czochralski (CZ)-grown silicon (Si) single crystals was clarified by in-situ observations of bubble formation at the interface between Si melt and a silica glass crucible in a small experimental apparatus. The nucleation and growth of bubbles were f