## Abstract 250 nm thick AlN layers without a nucleation layer were grown directly on 6H‐SiC(0001) with 3‐bilayer‐height steps by rf‐plasma‐assisted molecular‐beam epitaxy. The structure and morphology of the AlN layers have been studied using atomic force microscopy, X‐ray diffraction and transmis
✦ LIBER ✦
In situ surface phases and silicon-adatom geometry of the (2×2)C structure on 6H-SiC(0001̄)
✍ Scribed by A. Seubert; J. Bernhardt; M. Nerding; U. Starke; K. Heinz
- Book ID
- 117214564
- Publisher
- Elsevier Science
- Year
- 2000
- Tongue
- English
- Weight
- 282 KB
- Volume
- 454-456
- Category
- Article
- ISSN
- 0039-6028
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