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In situ study of GaAs growth mechanisms using tri-methyl gallium and tri-ethyl gallium precursors in metal-organic vapour phase epitaxy

✍ Scribed by M. Pristovsek; M. Zorn; M. Weyers


Book ID
108165641
Publisher
Elsevier Science
Year
2004
Tongue
English
Weight
321 KB
Volume
262
Category
Article
ISSN
0022-0248

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