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In situ Raman and second harmonic generation studies

✍ Scribed by Bruno Pettinger; Andreas Friedrich; Curtis Shannon


Book ID
107749902
Publisher
Elsevier Science
Year
1991
Tongue
English
Weight
610 KB
Volume
36
Category
Article
ISSN
0013-4686

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Oxide interface studies using second har
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We report experiments using a non-invasive second harmonic generation (SHG) technique to characterize buried Si/SiO 2 interfaces and also SIMOX thin film silicon-on-insulator (SOI) wafers. The measurements demonstrate that the SHG response can provide an indication of the quality of the buried oxide