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In-situ photoluminescence and capacitance-voltage characterization of InAlAs/InGaAs regrown heterointerfaces by molecular beam epitaxy

✍ Scribed by T. Saitoh; H. Tomozawa; T. Nakagawa; H. Takeuchi; H. Hasegawa


Publisher
Elsevier Science
Year
1995
Tongue
English
Weight
361 KB
Volume
150
Category
Article
ISSN
0022-0248

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