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In-situ photoluminescence and capacitance-voltage characterization of InAlAs/InGaAs regrown heterointerfaces by molecular beam epitaxy
✍ Scribed by T. Saitoh; H. Tomozawa; T. Nakagawa; H. Takeuchi; H. Hasegawa
- Publisher
- Elsevier Science
- Year
- 1995
- Tongue
- English
- Weight
- 361 KB
- Volume
- 150
- Category
- Article
- ISSN
- 0022-0248
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