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In situ observation of Si faceted dendrite growth from low-degree-of-undercooling melts

โœ Scribed by Kozo Fujiwara; Kensaku Maeda; Noritaka Usami; Gen Sazaki; Yoshitaro Nose; Akiko Nomura; Toetsu Shishido; Kazuo Nakajima

Book ID
103998448
Publisher
Elsevier Science
Year
2008
Tongue
English
Weight
592 KB
Volume
56
Category
Article
ISSN
1359-6454

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โœฆ Synopsis

We directly observed the transition of crystal growth behavior of Si in a low undercooling region. We succeeded in observing the initiation of faceted dendrite growth from a portion of parallel twins with increasing degrees of undercooling. The critical undercooling for growing a faceted dendrite was experimentally determined to be DT = 10 K. We also confirmed that parallel twins associated with faceted dendrite growth were formed between grain boundaries and not at grain boundaries during melt growth. The parallel-twin formation was explained in terms of a model of twin formation on the {1 1 1} facet plane at the growth interface.

๐Ÿ“œ SIMILAR VOLUMES

Two-dimensional facet crystal growth of
Two-dimensional facet crystal growth of silicon from undercooled melt of Siโ€“Ni alloy
โœ Toshio Suzuki; Seong Gyoon Kim; Won Tae Kim ๐Ÿ“‚ Article ๐Ÿ“… 2007 ๐Ÿ› Elsevier Science ๐ŸŒ English โš– 337 KB

The two-dimensional facet crystal growth of silicon from the undercooled melt of silicon-nickel alloys has been investigated using a phase-field model. The phase-field parameters derived at the thin interface limit and the anisotropic interface energy model proposed by Eggleston et al. have been use