✦ LIBER ✦
In-situ measurements of changes of the excess charge carrier decay rate at the crystalline silicon surface during low temperature annealing and cooling
✍ Scribed by Neitzert, H. C. ;Hirsch, W.
- Publisher
- John Wiley and Sons
- Year
- 1995
- Tongue
- English
- Weight
- 411 KB
- Volume
- 151
- Category
- Article
- ISSN
- 0031-8965
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