Extended Defects Formation in Si Crystal
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Fedina, L. ;Gutakovskii, A. ;Aseev, A. ;Van Landuyt, J. ;Vanhellemont, J.
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Article
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1999
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John Wiley and Sons
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English
โ 515 KB
In situ irradiation experiments in a high resolution electron microscope JEOL-4000EX at room temperature resulted in discovery of the isolated and combined clustering of vacancies and selfinterstitial atoms on {111}-and {113}-habit planes both leading to an extended defect formation in Si crystals.