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In-situ heteroepitaxial growth of CeO2YBa2Cu3O7 films on sapphire by injection CVD

✍ Scribed by A. Abrutis; V. Kubilius; V. Bigelyt≐; A. Teišerskis; Z. Šaltyt≐; J.P. Sénateur; F. Weiss

Book ID
117358171
Publisher
Elsevier Science
Year
1997
Tongue
English
Weight
528 KB
Volume
31
Category
Article
ISSN
0167-577X

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Epitaxial CeO2 buffer layers and YBa2Cu307\_~ thin films have been grown in situ on (1].02) sapphire by electron beam evaporation. Buffer layers of only 20 nm thickness inhibit interdiffusion between YBa2 Cu3 O7-6 and A12 03 as determined by depth profiling using x-ray photoelectron spectroscopy. Th