In-situ growth of Li-doped Bi2Sr2CaCu2O8 thin films by laser deposition

✍ Scribed by G. Poullain; T. Brousse; V. Chauvel-Kokabi; J.-F. Hamet; H. Murray

• Publisher: Elsevier Science
• Year: 1991
• Tongue: English
• Weight: 512 KB
• Volume: 182
• Category: Article
• ISSN: 0921-4534
• DOI: 10.1016/0921-4534(91)90471-a

✦ Synopsis

In-situ superconducting thin films ofLi-doped Bi2Sr2CaCu208 have been prepared on MgO single-crystal substrates by a pulsed laser ablation technique. Among the different parameters studied, substrate temperature and oxygen pressure during the deposition have been found to be most important. Deposition at 600°C in 0.2 mbar oxygen pressure from an undoped target led to semiconducting films. The addition of lithium was investigated and, under the same conditions, critical temperatures of 65 K-70 K were obtained. For such films, critical current densities in excess of 104 A/cm 2 were measured at 50 K. These results demonstrate that Li-doping is effective for low-temperature in-situ processing of superconducting Bi-based films.