In situ functionalized self-assembled monolayer surfaces for selective chemical vapor deposition of copper

✍ Scribed by Xin Liu; Qi Wang; Liu-Ping Chen

• Publisher: Elsevier Science
• Year: 2009
• Tongue: English
• Weight: 797 KB
• Volume: 255
• Category: Article
• ISSN: 0169-4332
• DOI: 10.1016/j.apsusc.2008.10.051

✦ Synopsis

Recent studies show that the self-assembled monolayer (SAM) is well suited to control the selectivity of chemical vapor deposition (CVD). Here, we reported the selective CVD for copper on the functionalized SAM surfaces (with -SH, -SS-, and -SO 3 H terminal groups). The -SS-and -SO 3 H terminal group surfaces were obtained through in situ chemical transformation of -SH terminal group surface of a 3mercaptopropyltrimethoxysilane-SAM (MPTMS-SAM). As a result, the -SS-terminal group surface reduces copper deposition and the -SO 3 H terminal group surface enhances copper deposition comparing to the -SH terminal group surface. In addition, the MPTMS-SAM was irradiated by UV-light through a photo mask to prepare SH-group and OH-group regions. Then, copper films were deposited only on the SH-group region of the substrate in chemical vapor deposition. Finally, patterns of copper films were formed in the way of UV-light irradiation. These results are expected for use of selective deposition of copper metallization patterns in IC manufacturing processes.