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In situ diagnostic of etch plasmas for process control using quantum cascade laser absorption spectroscopy

✍ Scribed by Lang, N. (author);Röpcke, J. (author);Wege, S. (author);Steinbach, A. (author)

Book ID: 111901032
Publisher: EDP Sciences
Year: 2009
Tongue: English
Weight: 233 KB
Volume: 49
Category: Article
ISSN: 1286-0042
DOI: 10.1051/epjap/2009198

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## Abstract In etch plasmas used for semiconductor processing, concentrations of the precursor gas NF~3~ and of the etch product SiF~4~ are measured online and in situ using a new diagnostic arrangement, the Q‐MACS Etch system, which is based on quantum cascade laser absorption spectroscopy (QCLAS)