In situ curvature monitoring for metal–organic vapor phase epitaxy of strain-balanced stacks of InGaAs/GaAsP multiple quantum wells
✍ Scribed by Masakazu Sugiyama; Kenichi Sugita; Yunpeng Wang; Yoshiaki Nakano
- Book ID
- 104022034
- Publisher
- Elsevier Science
- Year
- 2011
- Tongue
- English
- Weight
- 464 KB
- Volume
- 315
- Category
- Article
- ISSN
- 0022-0248
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✦ Synopsis
Strain-balanced growth of highly mismatched quantum wells is of crucial importance for obtaining high performance devices such as quantum-well solar cells and quantum cascade lasers. In situ curvature measurement successfully captured strain accumulation in lattice-mismatched InGaAs/ GaAsP multiple quantum wells that were grown by metal-organic vapor phase epitaxy. Average strain in the layers was detectable using the slope of curvature versus layer thickness. High-sensitivity measurement made it possible to detect strain accumulation and release within a single layer of InGaAs and GaAsP, respectively, by looking at the see-saw-like oscillation of curvature, which is an indication of successful strain balancing in a period of well/barrier. In situ curvature monitoring makes it easier and more efficient to adjust growth conditions for perfect strain balancing, as compared with conventional repetition of growth and X-ray diffraction measurement.