In-situ boron doping of chemical-bath deposited CdS thin films

✍ Scribed by Khallaf, Hani ;Chai, Guangyu ;Lupan, Oleg ;Chow, Lee ;Heinrich, Helge ;Park, S. ;Schulte, Alfons

• Book ID: 105365070
• Publisher: John Wiley and Sons
• Year: 2009
• Tongue: English
• Weight: 709 KB
• Volume: 206
• Category: Article
• ISSN: 0031-8965
• DOI: 10.1002/pssa.200824290

✦ Synopsis

Abstract

In‐situ boron doping of CdS using chemical‐bath deposition (CBD) is reported. The effect of B doping on optical properties, as well as electrical properties, crystal structure, chemistry, and morphology of CdS films is studied. We present a successful approach towards B doping of CdS using CBD, where a resistivity as low as 1.7 × 10^–2^ Ω cm and a carrier density as high as 1.91 × 10^19^ cm^–3^ were achieved. The bandgap of B‐doped films was found to slightly decrease as the [B]/[Cd] ratio in the solution increases. X‐ray diffraction studies showed B^3+^ ions likely enter the lattice substitutionally. A phase transition, due to annealing, as well as induced lattice defects, due to B doping, were detected by micro‐Raman spectroscopy and transmission electron microscopy. The chemistry and morphology of films were unaffected by B doping. (© 2009 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)