In-plane gate single-electron transistor in Ga[Al]As fabricated by scanning probe lithography

✍ Scribed by Lüscher, S.; Fuhrer, A.; Held, R.; Heinzel, T.; Ensslin, K.; Wegscheider, W.

• Book ID: 121311858
• Publisher: American Institute of Physics
• Year: 1999
• Tongue: English
• Weight: 378 KB
• Volume: 75
• Category: Article
• ISSN: 0003-6951
• DOI: 10.1063/1.125045