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Impurity photoconductivity in strained p-InGaAs/GaAsP heterostructures

✍ Scribed by V.Ya. Aleshkin; A.V. Antonov; D.V. Kozlov; B.N. Zvonkov; V.I. Gavrilenko

Book ID
103887737
Publisher
Elsevier Science
Year
2009
Tongue
English
Weight
219 KB
Volume
404
Category
Article
ISSN
0921-4526

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## Abstract Strained layer superlattice (SLS) structures lattice matched to GaAs, such as InGaAs/GaAsP, use thin films to meet both the strain balance and critical layer thickness (CLT) conditions. Optical absorption in the InGaAs layers will be shifted to higher energies relative to thick films du