Impurity-Induced First-Order Raman Spectrum in Cesium Halides

✍ Scribed by P. N. Ram; Bal K. Agrawal

• Publisher: John Wiley and Sons
• Year: 1973
• Tongue: English
• Weight: 447 KB
• Volume: 55
• Category: Article
• ISSN: 0370-1972
• DOI: 10.1002/pssb.2220550230

✦ Synopsis

Abstract

A theoretical study of impurity‐induced first‐order Raman scattering has been made in cesium halides. The defect model parameters obtained earlier by the analysis of infrared absorption experiments have been used in the calculation. The frequency dependence of the Raman intensity is found to be quite insensitive to variations in the force constants describing the defects. The Raman technique may therefore be employed for detailed study of the perfect phonon without having a detailed knowledge of the defect perturbation.