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Impurity diffusion behavior of bipolar transistor under low-temperature furnace annealing and high-temperature RTA and its optimization for 0.5-μm Bi-CMOS process

✍ Scribed by Norishima, M.; Iwai, H.; Niitsu, Y.; Maeguchi, K.


Book ID
114534405
Publisher
IEEE
Year
1992
Tongue
English
Weight
854 KB
Volume
39
Category
Article
ISSN
0018-9383

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