Impurity bound states in a compensated quantum well

✍ Scribed by Y.P. Varshni

• Publisher: Elsevier Science
• Year: 2001
• Tongue: English
• Weight: 92 KB
• Volume: 30
• Category: Article
• ISSN: 0749-6036
• DOI: 10.1006/spmi.2001.1003

✦ Synopsis

A detailed study of the bound-state properties of an impurity in a compensated semiconductor quantum well is presented using the screened potential of a minority impurity ion in a compensated semiconductor due to Schechter (1981). Accurate eigenenergies for the first 15 states are obtained for this potential as a function of the screening parameter λ by numerical integration of the two-dimensional (2D) Schrödinger equation. The energies are found to decrease with increasing values of the screening parameter λ in all cases. The variation of splitting between adjacent levels for the same value of n with the screening parameter is also studied.