Growth rate and impurity distribution in
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Rannveig Kvande; Γyvind MjΓΈs; Birgit Ryningen
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Article
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2005
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Elsevier Science
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English
β 216 KB
The solidification rate of multicrystalline silicon made by directional solidification has been determined by in situ measurements of the solid/liquid interface position in a pilot-scale furnace. Two experiments were conducted where silicon was solidified vertically from the bottom with a nearly pla