✦ LIBER ✦
Improving the quality of sub-1.5-nm-thick oxynitride gate dielectric for FETs with narrow channel and shallow-trench isolation using radical oxygen and nitrogen
✍ Scribed by Togo, M.; Watanabe, K.; Terai, M.; Yamamoto, T.; Fukai, T.; Tatsumi, T.; Mogami, T.
- Book ID
- 114616837
- Publisher
- IEEE
- Year
- 2002
- Tongue
- English
- Weight
- 303 KB
- Volume
- 49
- Category
- Article
- ISSN
- 0018-9383
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