Improving the characteristics of an InAlAsInGaAs inverted HEMT by inserting an InAs layer into the InGaAs channel

✍ Scribed by Tatsushi Akazaki; Takatomo Enoki; Kunihiro Arai; Yasunobu Ishii

• Publisher: Elsevier Science
• Year: 1995
• Tongue: English
• Weight: 379 KB
• Volume: 38
• Category: Article
• ISSN: 0038-1101
• DOI: 10.1016/0038-1101(95)98667-r