Advantages of point of use (POU) slurry
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Yong-Jin Seo; Sang-Yong Kim; Woo-Sun Lee
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Article
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2003
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Elsevier Science
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English
โ 560 KB
As integrated circuit devices shrink to smaller dimensions, a chemical mechanical polishing (CMP) process was required for the global planarization of the inter-metal dielectric (IMD) layer with free-defects. However, as the IMD layer gets thinner, micro-scratches are becoming a major defect. Micro-