✦ LIBER ✦
Improvements in TiWN barrier technology for devices using Au metallisation
✍ Scribed by S.-H Hong; J O’Sullivan; M Jonsson; N Rimmer
- Publisher
- Elsevier Science
- Year
- 2002
- Tongue
- English
- Weight
- 455 KB
- Volume
- 64
- Category
- Article
- ISSN
- 0167-9317
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✦ Synopsis
Robust barriers are needed to restrict the diffusion of Au into Si. The barrier must have low reaction rates with the diffusing species, good adhesion, mechanical and temperature stability, and acceptable thermal and electrical conductivity. This paper presents an evaluation of such a barrier (TiWN) at elevated temperatures ( . 400 8C) and investigates the effect of oxygen on the barrier properties. Oxygen will be shown to dramatically improve the strength of the TiWN barrier and to be stable within the barrier.